SEL Develops 5,291ppi Micro OLED Display Integrating Si CMOS and OSFET

What They Say

OLEDNet.com published an article highlighting that Japan’s Semiconductor Energy Laboratory (SEL) has developed a 5,291 ppi microOLED that it discussed at the recent IMID event. The development is intended to solve two challenges for the architecture:

  • Source/gate drivers are located outside the display area which means a significant bezel width, which is a disadvantage for AR/VR applications. SEL solves this by putting oxide semiconductors (OS) on top of the silicon CMOS backplane to drive the OLED which allows it to reduce the bezel width by 40%.
  • The OS is able to better drive the OLED than the silicon backplane allowing deeper blacks using a channel length of 200nm and using a breakdown voltage of about 20V making it suitable for driving white tandem OLEDs

What We Think

SEL, over the years, has developed some very early and impressive technologies for display driving and I believe that Sharp, in particular, was able to exploit SEL research in, for example, IGZO. (BR)

OLEDOSSi ?? SEL 1030x591

5291ppi micro OLED display ?? SEL 1030x566