What They Say
Nature has published an article from Samsung Display describing blue InGaN/GaN multiple quantum well (MQW) nanoRod LEDs (nLEDs) that have high EQE (20.2±0.6%). The group studied the interaction between the GaN surface and the sidewall passivation layer and found that minimising the point defects created during the passivation process is crucial to manufacturing high-performance nLEDs. Notably, the sol–gel method is advantageous for the passivation because SiO2 nanoparticles are adsorbed on the GaN surface, thereby minimizing its atomic interactions.
What We Think
Every week, I plough through the long list of articles in Nature looking for display-related articles and usually I don’t even really understand half the titles. However, this morning’s effort paid off! I haven’t yet been through the article in detail, but I think it’s a significant development.
Samsung has been talking for a while about nanoRod LEDs (or QNEDs) however the best primer is probably this article (Are Quantum Nano Emitting Diodes (QNEDs) the Next Big Thing?). It was reported earlier that part of the reason that Samsung Display was so keen to develop QD-OLED production was that there was the scope to replace the blue OLED emitter with a blue nanoRod LED later. (BR)
