What They Say
A group of researchers from the Hokkaido University in Japan has developed a new material it is calling ‘ITZO’ for its constituent elements indium, tin, zinc and oxygen) promises to be up to seven times faster than the current state-of-the-art material. However, it was not clear why the material is faster so the team worked on a unique measurement system and published their results in the journal Applied Electronic Materials.
The group showed that the higher electron mobility results from the unusual fact that in ITZO films of sufficient thickness, free charges accumulate at the interface with the carrier material and thus enable passing-through electrons to travel through the bulk of the material unhindered.
“Using the knowledge we gained from this study, we may in the future design other transparent oxide semiconductor thin-film transistors with different chemical compositions that exhibit even better electron mobility properties.”
What We Think
IGZO took a long time to get to industrialisation and some are still not able to reliably make TFTs with it. It’s not clear at the moment whether the same kind of issues might apply to this material. (BR)
