Plessey, Anvil Semiconductors and the University of Cambridge said that they are working together to fabricate high efficiency LEDs in cubic GaN grown on Anvil’s 3C-SiC / Si substrates. The group said that Cubic GaN has the potential to overcome the problems caused in conventional LEDs by the strong internal electric fields which impair carrier recombination and contribute to efficiency droop. This is particularly true for green LEDs where the internal electric fields are stronger and are believed to cause a rapid reduction in efficiency at green wavelengths known as “the green gap”.
Plessey said that it can migrate the technology onto its 150mm diameter silicon carbide wafers and also said that it believed that efficiency can get close to the level of red and blue LEDs.
Initial applications are likely to be in lighting.
