What They Say
We just caught up with news from Semiconductor Today that a Chinese ‘pure play’ foundry for GaN epitaxial wafers has released ‘full color GaN-on-Si’ LEDs based on production on ‘up to’ 300mm wafers.
Enkris is said to have overcome challenges of low EQE for red LEDs by using patented strain engineering and polarisation engineering to overcome the pronounced strain in the active region and the poor crystalline quality resulting from the large lattice mismatch between InGaN quantum wells (QWs) and GaN buffers.
At the moment, it has LEDs from 390-650nm) made on 200mm silicon substrates.
Enkris is also reported to have demonstrated RGB micro-LED arrays with a pixel size ranging from 2µm to 50µm, based on Full Color GaN RGB series of 200mm epiwafers.
Enkris’s Full Color GaN series products are available on both GaN-on-Si and GaN-on-sapphire wafers.
What We Think
Interesting times – there is so much happening in microLED. I’m looking forward to seeing what’s on show at Display Week! (BR)
Enkris has also demonstrated RGB micro-LED arrays with a pixel size ranging from 2µm to 50µm, based on Full Color GaN RGB series of 200mm epiwafers 
