What They Say
Kyocera said that it has a new process to make micro light sources (lasers and microLEDs) by growing the GaN layer used laterally which concentrates the defects in a central area of the layer. Devices can be made from the low defect area and there is reduced bonding between the Si substrate and the GaN layer which simplifies the peeling of the GaN layer off the silicon.
The firm said that it has pushed the size of semiconductor layers down to 100?m, from 300?m using conventional processes.
The displays created could be used in AR or HUDs.
What We Think
As Kyocera points out, detaching microLEDs from the sapphire or other growth substrate is a big challenge for current approaches. I’m convinced by the argument that the term microLED should really only apply to devices that just consist of the epi layers. If you don’t re-use the wafer that was used to grow the layers, you have a real issue with cost. But I confess that I’m on the edge of my knowledge! (BR)
